Communication-concepts 2N4401 Manuel d'utilisateur Page 1

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2N4401
Low Power Bipolar Transistors
Page <1> 12/05/08 V1.1
Features:
NPN Silicon Planar Epitaxial Transistors.
General Purpose Switching Applications.
TO-92 Plastic Package
Dimensions Minimum Maximum
A 4.32 5.33
B 4.45 5.20
C 3.18 4.19
D 0.41 0.55
E 0.35 0.50
F
G
1.14
1.40
H 1.53
K 12.70 -
L 1.982 2.082
Dimensions : Millimetres
Pin Configuration:
1. Emitter
2. Base
3. Collector
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Résumé du contenu

Page 1 - Low Power Bipolar Transistors

2N4401Low Power Bipolar TransistorsPage <1> 12/05/08 V1.1Features:• NPN Silicon Planar Epitaxial Transistors.• General Purpose Switching Applic

Page 2

2N4401Low Power Bipolar TransistorsPage <2> 12/05/08 V1.1Absolute Maximum RatingsRating Symbol 2N4401 UnitCollector-Emitter VoltageVCEO40VColle

Page 3

2N4401Low Power Bipolar TransistorsPage <3> 12/05/08 V1.1Electrical Characteristics (Ta= 25°C unless otherwise specified)Characteristic Symbol

Page 4

2N4401Low Power Bipolar TransistorsPage <4> 12/05/08 V1.1DC Current GainhFE, DC Current Gain (Normalized)ICCollector Current (mA)DC Current Gai

Page 5

2N4401Low Power Bipolar TransistorsPage <5> 12/05/08 V1.1DC Current GainhFE, DC Current Gain (Normalized)ICCollector Current (mA)Collector Satu

Page 6

2N4401Low Power Bipolar TransistorsPage <6> 12/05/08 V1.1ICCollector Current (mA)Voltage (V)On VoltagesPart Number TablePackage Part NumberTO-9

Page 7

For enquiries from all other markets2N4401Low Power Bipolar TransistorsPage <7> 12/05/08 V1.1Notes:International Sales Offices:AUSTRALIA – Farn

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