Communication-concepts MJE243 Manuel d'utilisateur télécharger pdf

April, 2009 − Rev. 13

1 Publication Order Number:

MJE243/D

MJE243 - NPN,

MJE253 - PNP

Complementary Silicon

Power Plastic Transistors

These devices are designed for low power audio amplifier and

low−current, high−speed switching applications.

Features

• High Collector−Emitter Sustaining Voltage −

CEO(sus)

= 100 Vdc (Min)

• High DC Current Gain @ I

= 200 mAdc

= 40−200

= 40−120

• Low Collector−Emitter Saturation Voltage −

CE(sat)

= 0.3 Vdc (Max) @ I

= 500 mAdc

• High Current Gain Bandwidth Product −

= 40 MHz (Min) @ I

= 100 mAdc

• Annular Construction for Low Leakages

CBO

= 100 nAdc (Max) @ Rated V

• Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage V

CEO

100 Vdc

Collector−Base Voltage V

100 Vdc

Emitter−Base Voltage V

7.0 Vdc

Collector Current − Continuous

− Peak

4.0

8.0

Adc

Base Current I

10 Adc

Total Power Dissipation @ T

= 25_C

Derate above 25_C

120

mW/_C

Total Power Dissipation @ T

= 25_C

Derate above 25_C

1.5

mW/_C

Operating and Storage Junction

Temperature Range

, T

stg

–65 to +150

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Case

8.34

_C/W

Thermal Resistance,

Junction−to−Ambient

83.4

_C/W

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Device Package Shipping

ORDERING INFORMATION

MJE243 TO−225 500 Units/Box

4.0 AMPERES

POWER TRANSISTORS

COMPLEMENTARY SILICON

100 VOLTS, 15 WATTS

http://onsemi.com

MJE243G

TO−225

(Pb−Free)

500 Units/Box

TO−225

CASE 77

STYLE 1

MARKING DIAGRAM

YWW

JE2x3G

Y = Year

WW = Work Week

JE2x3 = Device Code

x = 4 or 5

G=Pb−Free Package

Preferred devices are recommended choices for future use

and best overall value.

MJE253 TO−225 500 Units/Box

MJE253G

TO−225

(Pb−Free)

500 Units/Box

1 2 3 4 5 6

Résumé du contenu

Page 1 - Power Plastic Transistors

Page 2 - ELECTRICAL CHARACTERISTICS (T

MJE243 − NPN, MJE253 − PNPhttp://onsemi.com2ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)CharacteristicSymbol Min Max UnitOFF

Page 3 - Figure 4. Thermal Response

MJE243 − NPN, MJE253 − PNPhttp://onsemi.com31620Figure 1. Power DeratingT, TEMPERATURE (°C)040 60 100 120 16012PD, POWER DISSIPATION (WATTS)1.

Page 4 - Figure 6. Turn−Off Time

MJE243 − NPN, MJE253 − PNPhttp://onsemi.com410VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)0.1300.010.05Figure 5. Active Region Safe Operating Area50

Page 5

MJE243 − NPN, MJE253 − PNPhttp://onsemi.com5IC, COLLECTOR CURRENT (AMP)IC, COLLECTOR CURRENT (AMP)IC, COLLECTOR CURRENT (AMP)hFE, DC CURRENT G

Page 6 - PACKAGE DIMENSIONS

MJE243 − NPN, MJE253 − PNPhttp://onsemi.com6PACKAGE DIMENSIONSTO−225CASE 77−09ISSUE ZNOTES:1. DIMENSIONING AND TOLERANCING PER ANSIY14.5M, 198

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Communication-concepts MJE243 Manuel d'utilisateur

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